The Institute of Solid State Physics at the Friedrich Schiller University Jena in Germany runs several ion accelerators for research on material science and solid state physics. High expertise has been developed in the application of ion beam methods in the fields of optics and photonics, but also in the fundamentals of ion-nanostructure-interactions. We offer ion implantation, ion irradiation but also ion beam analysis for a variety of collaborative research topics.
Our 3 MeV Tandetron accelerator JULIA is equipped with a sputter ion source and a duoplasmatron, as well as with an universal beam line for ion implantation and ion beam analysis (IBA). Possible ion beam energies are from 500 keV to 12 MeV, and traget temperatures can range from 15 K to 1500 K. Available ion beam analysis techniques are RBS, Channeling, NRA, and PIGE.
The ion implanter ROMEO can be used for ion implantation of basically „any“ element with ion energies in the range from 10 keV to 380 keV. The target can be cooled down to 15 K and heated up to 1500 K. Sample areas are limited to some mm2 up to 2-inch wafer. Three dimensional nanostructures can be rotated and implanted under an angle of 45 degree.
IFK’s main areas of competence:
- Ion beam modification of materials
- Ion beam analysis of thin films
- Ion-Nanostructure-Interactions (MC tool: iradina)
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