The Surrey Ion Beam Centre (SIBC) is an ISO9001 certified UK National Facility supported by the Engineering and Physical Sciences Research Council in UK. It aims to promote and facilitate world class research in the field of ion beam applications, for and with the academic, commercial and industrial communities. It allows users to undertake a wide variety of research using ion implantation, ion beam analysis and our extensive ancillary facilities. It provides training and education to the UK community, specifically, in the applications and technology of ion beams and provides a technology transfer to industry and academia. The SIBC allows users to undertake a wide variety of research using ion implantation, ion irradiation and ion beam analysis. The SIBC also has extensive processing and characterization facilities that can be made available to SIBC users and collaborators.
Surrey’s main areas of competence:
- Advanced materials research
- energy applications
- industrial applications of ion technology
Role in RADIATE:
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- providing 1600 hours of transnational access to users
- networking activities leader
- work package leader: “Standards, Quality Assurance and Best Practice” and “Common Standards and Data management”
- contribution to joint research activities
Ion Implantation / Irradiation:
| Parameter | Description |
|---|---|
| Ion species | H-U (stable nuclides, poly-atomic, multiple charge state ions) |
| Ion energy | 100eV- 4MV (12MeV for multiple charge states) |
| Depth range | few Å - 80 µm |
| Fluence | 1 ion at a time - 1018 cm-2 |
| Incidence angle | Standard 0°, 3.5, 7°; others on request |
| Beam current | fA - mA |
| Sample size | Small pieces (cm2) - Ø 200 mm wafers - some at 40cmx40cm |
| Temperature | Liquid He - 1100K |
| Special features | in situ DLTS, single ion implanters for quantum technology. Can provide some access to Dual beam in-situ TEM facility - MIAMI2. Implant chambers in class 100 clean room |
Single Ion Implanter:
| Parameter | Ionoptika - SIMPLE1 | Ionoptika - SIMPLE2 |
|---|---|---|
| Ion Species | Au, Bi, Si, Er, Eu, Se, In | O,N |
| Resolution | 20nm | 40nm |
| absolute ion detection | 95% | 80% |
| ions/s | 1-10000 | 1-10000 |
IBA:
| Method | Elements | Detection limit [at%] | Resolution depth | Resolution lateral |
|---|---|---|---|---|
| RBS | O - U | 0.1 | 10 nm | 1 um |
| ERD | H, B-Si | 0.1 | 15 nm | 0.1 mm |
| PIXE | Si-U | 0,0001 | ||
| PIGE | Li-P | 0,01 | ||
| Standard | 1mm | |||
| µ-Probe | 1um | |||
| NRA | H, d, B, etc | 0,01 | 10 nm | 1 um |
| MeV-SIMS | organics | 0,1 | surface | 5 um |
| DAPNE | organics | 0,0001 | surface | 10 um |
FIB:
| Parameter | FEI FIB | Tescan Plasma FIB |
|---|---|---|
| Ion species | Ga | Xe |
| Energy | 5 - 30 keV | 5 - 30 keV |
| Beam currents | pA - nA | pA - nA |
| Resolution | 7nm (@ 1pA) | 7nm (@ 1pA) |
| Special features | TEM lamella preparation | Plasma FIB, can deposit and create 3D structures |
Surrey Ion Beam Centre overview © Surrey